Researchers have demonstrated a new technique for precisely controlling phase boundaries in thin film materials by ...

Researchers have demonstrated a new technique for precisely controlling phase boundaries in thin film materials by ...

The NanoRAM market offers growth opportunities in advanced memory solutions for data centers, edge computing, and automotive industries. Its energy-efficient, high-performance capabilities support AI ...

This paper investigates the impact of multi-domain dynamics within a ferroelectric tunnel junction (FTJ). The phase field model is formulated through the coupled solution of Poisson’s equation with ...

A new polymer nanofiber material achieves high crystallinity and electroactivity, advancing the field of self-powered ...

Researchers with the schools of science and engineering at Rensselaer Polytechnic Institute (RPI) are exploring new ways to ...

Researchers with the schools of science and engineering at Rensselaer Polytechnic Institute (RPI) are exploring new ways to ...

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed ...

Xiaoyan Tan, Assistant Professor, Chemistry and Biochemistry, College of Science, is set to receive funding for the project: “Investigation of Ferroelectric Oxides as Heterogeneous Photocatalysts for ...

Kopin Corporation (NASDAQ: KOPN), a leading provider of application-specific optical systems and high performance microdisplays for defense, training, enterprise, industrial, consumer and medical ...

GaN HEMTs, widely used in wireless comms, power switching devices, and power amplifiers, owe their excellent high-frequency performance to a heterojunction (typically based on GaN and AlGaN) to create ...