Palo Alto, Calif. The ATF-511P8 enhanced-mode pHEMT (E-pHEMT) FET is optimized for wireless base stations operating at frequencies up to 6 GHz. At 2 GHz, this FET sports +30-dBm output power at 1-dB ...

IXYS Corp has introduced a high performance family of GaAs based Power PHEMT (Pseudomorphic High Electron Mobility Transistors). The “PH” series of power PHEMT (AlGaAs/InGaAs) devices, MwT-PH-7, PH-15 ...

Designers of microwave power amplifiers and low-noise amplifiers have a new weapon: the ATF-501P8 enhancement-mode pseudomorphic high-electron-mobility field-effect transistor (E-pHEMT FET). The ...

Global Communication Semiconductors, LLC (GCS) Announces Two New Foundry Processes Including a New InGaP HBT Process for the 802.11ac and 4G LTE PA Applications and an E-mode pHEMT Low Noise ...

The article MicroWave Technology Announces Advanced GaAs pHEMT-Based Ultra-Broadband Driver MMIC Amplifier Up to 50 GHz originally appeared on Fool.com. Try any of our Foolish newsletter services ...

AmpliTech Group Inc. (NASDAQ:AMPG) shares rose 3.6% after the company underscored its expanding presence in the quantum computing industry, driven by increasing adoption of its cryogenic Low Noise ...

MwT Inc. Don Apte, 510-651-6700 [email protected] KEYWORDS: United States Europe North America California Switzerland INDUSTRY KEYWORDS: The article IXYS' MicroWave Technology Announces Two Advanced ...

The SPF-3043, a dc to 10 GHz, low-noise gallium arsenide pHEMT component, claims to suitable for a wide range of low-noise amplifier applications in wireless-infrastructure equipment. The device ...

GaAs manufacturers competing for e-pHEMT business It will initially focus on 0.5-micron process technology but will develop 0.13-micron e-pHEMTs to serve market demand. To meet the handset market ...

RFMD's 0.3-micron pHEMT technology delivers high power and is optimized for X-band phased array power amplifiers (PAs) and 8-16 GHz wideband military electronic warfare jammers.

The HMC668LP3E and the HMC669LP3E are GaAs pHEMT MMIC low noise amplifiers which are rated from 700 to 1200 MHz and 1700 to 2200 MHz, respectively. These compact LNA MMICs feature an integrated LNA ...

These new cores extend the gain coverage for GRF’s existing portfolio of general-purpose RF/microwave gain blocks and, when used in conjunction with the GRF2013, customers can now choose from a family ...